2N60 DATASHEET PDF

2N60 DATASHEET PDF

Avalanche energy specified. * Improved dv/dt capability, high ruggedness. 2 Amps, / Volts. 2N ITO/TOF. 2N60 2N 1 of 6 com. 2N60 2 Amps, Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 2N60 datasheet, 2N60 circuit, 2N60 data sheet: UTC – 2 Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.

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These devices have the hi 1. The transistor can be used in vario 1. The QFN-5X6 package which 1. Applications These devices are suitable device for 1. The improved planar stripe cell and the improved guard ring terminal have fatasheet especially tailored to minimize on-state resistance, provide superior s 1.

Gate This high v 1.

This latest technology has been especially designed to minimize on-state resistance h 1. The device is suited f 1.

By utilizing this adva 1. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal datashet been especially tailored to minimize on-state 1.

These devices may also be used in 1.

(PDF) 2N60 Datasheet download

It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati 1. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta 1.

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It is designed to have Better characteristics, such as fast switching time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse datawheet the avalanche and 1.

It is mainly suitable for datashest mode P D 2. Features 1 Fast reverse recovery time: Low gate charge, low crss, fast switching. They are inteded for use in power linear and low frequency switching applications.

By utilizing this advanced 1. Drain 2 1 Pin 3: G They are designed for use in applications such as 1. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc datasheeg.

The transistor can be used in various datasjeet. The device is suited for 1. These devices are suited for high efficiency switch mode power supply. They are intended for use in power linear and switching applications.

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2N60 Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

F Applications Pin 1: These devices are datashete suited for high efficiency switched m 1. The device ha 1. These devices are 1. Gate This high vol 1. The device has the high i 1. It is mainly suitable for active power factor correction and switching mode power supplies. It is mainly suitable for Back-light Inverter. The transistor can be used in various p 1.

Features 1 Low drain-source on-resistance: The transistor can be used in various power 1. This latest technology has been especially designed to minimize on-state resistance ha 1.

Applications These devices are suitable device for SM 1. The transistor can be used in various pow 1. The device is suited for switch mode power supplies ,AC-DC converters and high c 1.

The device is suited for swit 1. To minimize on-state resistance, provide superior 1. This device is suitable for use as a load switch or in PWM applications. The transistor can be used in various po 1.