AT45DB642D DATASHEET PDF

AT45DB642D DATASHEET PDF

Please refer to data sheets for detailed information. To select how PB3 and PB4 should be used, the jumpers labeled PB3 and PB4 must be set correctly. Description. The AT45DBD is a volt, dual-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program. Explore the latest datasheets, compare past datasheet revisions, and confirm part Datasheet for AT45DBD-CNUReel AT45DBD-CNU-SL

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The information in this document is provided in connection with Atmel products. Main Memory Page Program through Buffer 1 or 2 Other algorithms can be used to rewrite portions of the Flash array. The entire main memory can be erased at one time by using the Chip Erase command. To perform a buffer to main memory page program with built-in erase for the The busy status indicates that the Flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed.

Page 35 Table Being able to reprogram the Sector Protection Register with the sector protection enabled allows the user to temporarily disable the sector protection to an individual sector rather than dis- abling sector protection completely.

All program operations to the DataFlash occur on a page by page basis Manufacturer ID codes that are two, three or even four bytes long with the first byte s in the sequence being 7FH. Reading the Sector Lockdown Register The Sector Lockdown Register can be read to determine which sectors in the memory array are permanently locked down.

The device operates from a single power supply, 2.

AT45DB642D-TU

Master clocks in BYTE a. Dimensions D1 and E do not include mold protrusion. The Block Erase function is not affected by the Chip Erase issue. Deep Power-down, the device will return to the normal standby mode. Master clocks in BYTE h last output byte.

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AT45DBD-CNU Suppliers

The user is able to configure these parts to a byte page size if desired. Memory Array To provide optimal flexibility, the memory array of the AT45DBD is divided into three levels of granularity comprising of sectors, blocks, and pages. The DataFlash is designed to Page 53 Packaging Information The surface finish of the package shall be EDM Charmille Main Memory Page to Buffer 1 or 2 Compare 7. To perform a contin- uous read with the page size set to bytes, the opcode, 03H, must be clocked into the device followed by three address bytes A22 – A To allow for simple in-system reprogrammability, the AT45DBD does not require high input voltages for programming.

The Sector Protection Register datashheet be reprogrammed while the sector protection enabled or dis- abled. The device density is indicated using bits and 2 of the status register. Therefore, the contents of the buffer will be altered from its previous state when this command is issued. At45db462d Waveforms Six different timing waveforms are shown below. Elcodis is a trademark of Elcodis Company Ltd. Fixed tim- ing is not recommended.

Command Resume from Deep Power-down Figure Low-power applications may choose to wait until 10, cumulative page erase and program operations have accumulated before rewriting all pages of the sector. Sector Lockdown com- datashheet if necessary. The shipping carrier option is not marked at45dh642d the devices. Command Sector Lockdown Figure Configuration Register is a user-programmable nonvolatile regis- ter that allows the page size of the main memory to be configured for binary page size bytes or standard DataFlash page size bytes.

For the AT45DBD, the four bits are The decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of DataFlash devices Copy your embed code and put on your site: Auto Page Rewrite Group C commands consist of: Use Block Erase opcode 50H alternative.

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Since the entire memory array erased, no address datashete need to be clocked into the device, and any data clocked in after the opcode will be ignored This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the dxtasheet page-by- page page can be written using either a Main At445db642d Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation.

Datasheet: AT45DB642D

PUW Changed t from max Parts ordered with suffix SL are shipped in bulk with the page size set to bytes.

The status of whether or not sector protection has been enabled or disabled by either the software or the datazheet controlled methods can be deter- mined by checking the Status Register. Download datasheet 2Mb Share this page. Please contact Atmel for the estimated availability of devices with the fix. Slave clocks out BYTE a first output byte. All other trademarks are the property of their respective owners.

Therefore not possible to only program the first two bytes of the register and then pro- datsheet the remaining 62 bytes at a later time. Page 39 Utilizing daasheet RapidS To take advantage of the RapidS function’s ability to operate at higher clock frequencies, a full clock cycle must be used to transmit data back and forth across the serial bus.