BUK455 DATASHEET PDF

BUK455 DATASHEET PDF

Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied. BUKA Powermos Transistor: 60v, 41a. N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in. Details, datasheet, quote on part number: BUKA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK Drain-source voltage Drain current (DC).

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Stress above one or more of the limiting values may cause permanent damage to the device. Application information Where application information is given, it is advisory and does not form part of the specification. VDD August 5 Rev 1. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any dqtasheet resulting from such improper bukk455 or sale. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. No liability will be accepted by the publisher for any consequence of its use.

Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. TOAB; pin 2 connected to mounting base.

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Datasheey data sheet contains final product specifications. Reproduction in fatasheet or in part is prohibited without the prior written consent of the copyright owner. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

Avalanche energy test circuit. Refer to mounting instructions for TO envelopes. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

August 6 Rev 1. Observe the general buk4555 precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

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This data sheet contains target or goal specifications for product development. August 7 Rev 1. Normalised continuous drain current. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Normalised drain-source on-state resistance. August 6 Rev 1. Refer to mounting instructions for TO envelopes. Exposure to limiting values for extended periods may affect device reliability. No liability will be accepted by the publisher for any consequence of its use.

Typical reverse diode current. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Normalised continuous drain current.

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Normalised avalanche energy rating. Typical reverse diode current. C Philips Electronics N.

BUK datasheet & applicatoin notes – Datasheet Archive

Product specification This data sheet contains final product specifications. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Normalised avalanche energy rating. TOAB; pin 2 connected to mounting base. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Typical turn-on gate-charge characteristics. Typical capacitances, Ciss, Coss, Crss.

(PDF) BUK455 Datasheet download

Stress above one or more of the limiting values may cause permanent damage to the device. Avalanche energy test circuit. Typical capacitances, Ciss, Coss, Crss. August 7 Rev 1. Normalised drain-source on-state resistance. UNIT – – 1. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Typical turn-on gate-charge characteristics.

Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.